TTC5200 - Toshiba

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TTC5200
Manufacturer

Toshiba
ChipWorker Part#

CW50192296
Category

BJT Transistor, BJT
Package

TO-3
Description

TO-3PL NPN 230V 15A
Documentation

Datasheet

TTC5200 Global Supplier

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TTC5200 Specifications

Attribute	Attribute Value

Part Number	TTC5200
Manufacturer	Toshiba
ChipWorker Part#	CW50192296
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	230 V
Continuous Collector Current	15A
DC Current Gain (hFE)	160
Operating Temperature (Max)	150 ℃
	expand all
Product Lifecycle Status	Active
RoHS	RoHS Compliant

Product Description

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
Collector to emitter voltage (Vce) is 230V
Collector to base voltage of 230V
Collector current (Ic) is 15A
Power dissipation (pd) is 150W
Junction temperature of 150°C
Current gain of 35 at 7A collector current
Collector to emitter saturation voltage of 3V
Collector to emitter breakdown voltage of 230V

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