UCC27201D - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

UCC27201D
Manufacturer

TI
ChipWorker Part#

CW22537769
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 3A 2Out Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8Pin SOIC Tube
Documentation

Datasheet

UCC27201D Global Supplier

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UCC27201D Specifications

Attribute	Attribute Value

Part Number	UCC27201D
Manufacturer	TI
ChipWorker Part#	CW22537769
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Frequency	1 MHz
Supply Voltage (DC)	8.00V (min)
Rise/Fall Time	8ns, 7ns
Number of Outputs	2 Output
Output Current	3.00 A
Number of Positions	8 Position
Power Dissipation	1.3 W
Rise Time	8 ns
Fall Time	7 ns
Fall Time (Max)	7 ns
Fall Time (Max)	8 ns
Operating Temperature (Max)	140 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1300 mW
Supply Voltage	8V ~ 17V
Supply Voltage (Max)	17 V
Supply Voltage (Min)	8 V
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Size-Length	4.9 mm
Size-Width	3.91 mm
Size-Height	1.58 mm
Operating Temperature	-40℃ ~ 140℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The UCC27201D is a high-frequency N-channel MOSFET Driver includes a 120V bootstrap diode and high-side and low-side driver with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate driver is independently controlled and matched to 1ns between the turn-ON and turnoff of each other. An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Drives two N-channel MOSFETs in high-side and low-side configuration
Negative voltage handling on HS (-5V)
On-chip 0.65V VF, 0.6R RD bootstrap diode
Greater than 1MHz of operation
Under-voltage lockout for high-side and low-side driver
120V Maximum boot voltage
20V Maximum VDD voltage
20ns Propagation delay time
3A Sink and source output current
1ns Delay matching
Green product and no Sb/Br

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