UCC27324 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

62 points

Part No

UCC27324
Manufacturer

TI
ChipWorker Part#

CW73741237
Package

PowerPAD-MSOP-8
Description

DUAL 4A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
Documentation

Datasheet
Ships from

Moscow
Наличие

450 pcs In Stock
Estimated Price

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UCC27324 Specifications

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Attribute	Attribute Value

Part Number	UCC27324
Manufacturer	TI
ChipWorker Part#	CW73741237
Documentation	Datasheet
Case/Package	PowerPAD-MSOP-8
	expand all
Product Lifecycle Status
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The UCC2732x and UCC3732x family of high-speed dual-MOSFET Drivers deliver large peak currents into capacitive loads. Three standard logic options are offered – dual-inverting, dual-noninverting, and one-inverting and one-noninverting driver. The thermally enhanced 8-pin PowerPAD MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. UCC2732x and UCC3732x is also offered in the standard SOIC-8 (D) or PDIP-8 (P) packages.
Using a design that inherently minimizes shoot-through current, these drivers deliver 4 A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A unique BiPolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.
Industry-Standard Pin-Out
High Current-Drive Capability of ±4 A at the Miller Plateau Region
Efficient Constant-Current Sourcing Even at Low Supply Voltages
TTL/CMOS Compatible Inputs Independent of Supply Voltage
20-ns Typical Rise and 15-ns Typical Fall Times with 1.8-nF Load
Typical Propagation-Delay Times of 25 ns with Input Falling and 35 ns with Input Rising
4.5-V to 15-V Supply Voltage
Supply Current of 0.3 mA
Dual Outputs are Paralleled for Higher Drive Current
Available in Thermally Enhanced MSOP-PowerPAD™ Package
Rated From –40°C to +125°C
TrueDrive™ Output Architecture Using Bipolar and CMOS Transistors in Parallel

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