UCC27512MDRSTEP - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

UCC27512MDRSTEP
Manufacturer

TI
ChipWorker Part#

CW34833363
Category

FET Driver
Package

WSON-6
Description

MOSFET DRVR 8A 1Out Lo Side Inv/Non-Inv 6Pin WSON Tube
Documentation

Datasheet

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UCC27512MDRSTEP Specifications

Attribute	Attribute Value

Part Number	UCC27512MDRSTEP
Manufacturer	TI
ChipWorker Part#	CW34833363
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	WSON-6
Rise/Fall Time	8ns, 7ns
Number of Outputs	1 Output
Output Current	8 A
Rise Time	9 ns
Fall Time	7 ns
Fall Time (Max)	11 ns
Fall Time (Max)	22 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	55 ℃
Supply Voltage	12 V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	4.5 V
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Operating Temperature	-55℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.
UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of 55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

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