ULN2003ADR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ULN2003ADR
Manufacturer

TI
ChipWorker Part#

CW17036
Category

BJT Transistor, BJT
Package

SOIC-16
Description

SOIC NPN 50V 0.5A
Documentation

Datasheet

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ULN2003ADR Specifications

Attribute	Attribute Value

Part Number	ULN2003ADR
Manufacturer	TI
ChipWorker Part#	CW17036
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Voltage Rating (DC)	50.0 V
Current Rating	500 mA
Number of Outputs	7 Output
Output Voltage	50 V
Output Current	0.5 A
Number of Channels	7 Channel
Number of Positions	16 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	50 V
Drivers Per Package	7
Continuous Collector Current	0.5A
Output Current (Max)	500 mA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	-20 ℃
Input Voltage	30 V
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Size-Length	9.9 mm
Size-Width	3.91 mm
Size-Height	1.58 mm
Operating Temperature	-20℃ ~ 70℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The ULN2003ADR is a seven high-voltage/high-current NPN Darlington Transistor Array. All units feature a common emitter and open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads. The ULN2003ADR device has a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5V or 3.3V. The ULN2003ADR device offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors and LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling the outputs.
Output Clamp Diodes
Inputs Compatible With Various Types of Logic
250ns Typical Delay Time
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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