ULQ2003ADR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ULQ2003ADR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8242263
Category

BJT Transistor, BJT
Package

SOIC-16
Description

SOIC NPN 0.5A
Documentation

Datasheet

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ULQ2003ADR2G Specifications

Attribute	Attribute Value

Part Number	ULQ2003ADR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8242263
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Halogen Free Status	Halogen Free
Number of Outputs	7 Output
Number of Positions	16 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	0.5A
hFE Min	1000
Output Current (Max)	500 mA
DC Current Gain (hFE)	1000
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
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Size-Length	10 mm
Size-Width	4 mm
Size-Height	1.75 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.
Features
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Peak inrush currents to 500 mA
High breakdown voltage
Internal suppression diodes

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