UMD12NTR - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

UMD12NTR
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW12014125
Category

BJT Transistor, BJT
Package

SOT-363-6
Description

UMT NPN+PNP 50V 100mA
Documentation

Datasheet

UMD12NTR Global Supplier

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UMD12NTR Specifications

Attribute	Attribute Value

Part Number	UMD12NTR
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW12014125
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363-6
Current Rating	30.0 mA
Power Rating	0.15 W
Number of Channels	2 Channel
Polarity	NPN, PNP
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	68 @5mA, 5V
Input Power (Max)	150 mW
DC Current Gain (hFE)	68
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	150 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The UMD12NTR is a PNP-NPN dual digital Bipolar Transistor with built-in resistors. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
Ultra-compact complex digital transistor
Potential divider type
Small surface-mount package

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