US6M1TR - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

US6M1TR
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW18153568
Category

MOSFET, MOSFET Transistor
Package

SOT-363-6
Description

TUMT N+P 30V/20V 1.4A/1A
Documentation

Datasheet

US6M1TR Global Supplier

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US6M1TR Specifications

Attribute	Attribute Value

Part Number	US6M1TR
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW18153568
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363-6
Current Rating	1.40 A
Number of Channels	2 Channel
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	170 mΩ
Polarity	N-Channel, Dual N-Channel
Power Dissipation	1 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	30V, 20V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	1.40 A, 1.00 A
Rise Time	6.00 ns
Input Capacitance (Ciss)	70pF @10V(Vds)
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1 W
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Size-Length	2 mm
Size-Width	1.7 mm
Size-Height	0.77 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Dual N&PCh; 2 W 30 V/20 V 280 mOhm SMT 4 + 2.5 V Drive MosFet -TUMT-6

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