VNB10N07 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

VNB10N07
Manufacturer

ST Microelectronics
ChipWorker Part#

CW182197437
Category

FET Driver
Package

TO-263-3
Description

MOSFET Transistor, N Channel, 10A, 70V, 100mohm, 10V
Documentation

Datasheet

VNB10N07 Global Supplier

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VNB10N07 Specifications

Attribute	Attribute Value

Part Number	VNB10N07
Manufacturer	ST Microelectronics
ChipWorker Part#	CW182197437
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Outputs	1 Output
Drain to Source Resistance (on) (Rds)	140 mΩ
Power Dissipation	50.0 W
Breakdown Voltage (Drain to Source)	10.0 V
Continuous Drain Current (Ids)	10.0 A
Output Current (Max)	7 A
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Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER MOSFET

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- Electrical testing
- Surface testing

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