VRF152 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

VRF152
Manufacturer

Microsemi
ChipWorker Part#

CW66519329
Category

Transistor
Package

M-174
Description

VRF152 Series N-Channel 30MHz 22dB 20A 50V RF Power Mosfet - M174
Documentation

Datasheet

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VRF152 Specifications

Attribute	Attribute Value

Part Number	VRF152
Manufacturer	Microsemi
ChipWorker Part#	CW66519329
Category	Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	M-174
Frequency	175 MHz
Current Rating	20 A
Power Dissipation	300 W
Threshold Voltage	3.6 V
Drain to Source Voltage (Vds)	130 V
Breakdown Voltage (Drain to Source)	130 V
Continuous Drain Current (Ids)	20.0 A
Output Power	150 W
Gain	22 dB
Test Current	250 mA
Input Capacitance (Ciss)	383pF @50V(Vds)
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	300000 mW
Voltage Rating	130 V
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Material	Silicon
Operating Temperature	65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Need a MOSFET that will work in radio frequency environments? This VRF152 RF amplifier made from Microsemi is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 300000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 175 MHz. This N channel RF power MOSFET operates in depletion mode.

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