ZTX453 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX453
Manufacturer

Diodes
ChipWorker Part#

CW16006253
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 100V 1A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX453 Specifications

Attribute	Attribute Value

Part Number	ZTX453
Manufacturer	Diodes
ChipWorker Part#	CW16006253
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Frequency	150 MHz
Voltage Rating (DC)	100 V
Current Rating	1.00 A
Power Rating	1 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	40 @150mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Implement this NPN ZTX453 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

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