ZTX550 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX550
Manufacturer

Diodes
ChipWorker Part#

CW8214904
Category

BJT Transistor, BJT
Package

E-Line-3
Description

Trans GP BJT PNP 45V 1A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX550 Specifications

Attribute	Attribute Value

Part Number	ZTX550
Manufacturer	Diodes
ChipWorker Part#	CW8214904
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Frequency	150 MHz
Voltage Rating (DC)	-45.0 V
Current Rating	-1.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1 W
Gain Bandwidth Product	150 MHz
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	1A
hFE Min	100 @150mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Implement this versatile PNP ZTX550 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.

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