ZTX551 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX551
Manufacturer

Diodes
ChipWorker Part#

CW56218460
Category

BJT Transistor, BJT
Package

TO-92-3
Description

TRANSISTOR PNP 60V 1000mA E-LINE
Documentation

Datasheet

ZTX551 Global Supplier

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ZTX551 Specifications

Attribute	Attribute Value

Part Number	ZTX551
Manufacturer	Diodes
ChipWorker Part#	CW56218460
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Voltage Rating (DC)	-60.0 V
Current Rating	-1.00 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	1A
hFE Min	50 @150mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The ZTX551 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -80V collector-base voltage.
-55 to 200°C Operating temperature range

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