ZTX601B - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX601B
Manufacturer

Diodes
ChipWorker Part#

CW42770466
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans Darlington NPN 160V 1A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX601B Specifications

Attribute	Attribute Value

Part Number	ZTX601B
Manufacturer	Diodes
ChipWorker Part#	CW42770466
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Voltage Rating (DC)	160 V
Current Rating	1.00 A
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	160 V
Continuous Collector Current	1A
hFE Min	10000 @500mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	1 W
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Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Thanks to Diodes Zetex"s NPN ZTX601B Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 5000@50mA@10 V|10000@500mA@10V|5000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 10 V.

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