ZTX605 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX605
Manufacturer

Diodes
ChipWorker Part#

CW12331430
Category

BJT Transistor, BJT
Package

E-Line-3
Description

Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 150MHz, 1W, 1A, 5000 hFE
Documentation

Datasheet

ZTX605 Global Supplier

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ZTX605 Specifications

Attribute	Attribute Value

Part Number	ZTX605
Manufacturer	Diodes
ChipWorker Part#	CW12331430
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Voltage Rating (DC)	120 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	1A
hFE Min	2000 @1A, 5V
hFE Max	2000
Input Power (Max)	1 W
DC Current Gain (hFE)	5000
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	150MHz (Min)
Power Dissipation (Max)	1 W
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The ZTX605 is a 120V Silicon NPN Planar Medium Power Darlington Transistor with 1W power dissipation.

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