ZTX649 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX649
Manufacturer

Diodes
ChipWorker Part#

CW27992775
Category

BJT Transistor, BJT
Package

E-Line-3
Description

Trans GP BJT NPN 25V 2A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX649 Specifications

Attribute	Attribute Value

Part Number	ZTX649
Manufacturer	Diodes
ChipWorker Part#	CW27992775
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Frequency	240 MHz
Voltage Rating (DC)	25.0 V
Current Rating	2.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	25 V
Continuous Collector Current	2A
hFE Min	100 @1A, 2V
Input Power (Max)	1 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZTX649 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.

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