ZTX757 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX757
Manufacturer

Diodes
ChipWorker Part#

CW42876524
Category

BJT Transistor, BJT
Package

E-Line-3
Description

ZTX757 Series 300V 0.5A PNP Silicon Planar Medium Power Transistor - TO-92-3
Documentation

Datasheet

ZTX757 Global Supplier

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ZTX757 Specifications

Attribute	Attribute Value

Part Number	ZTX757
Manufacturer	Diodes
ChipWorker Part#	CW42876524
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Frequency	30 MHz
Voltage Rating (DC)	-300 V
Current Rating	-500 mA
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	300 V
Continuous Collector Current	0.5A
hFE Min	50 @100mA, 5V
Input Power (Max)	1 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The PNP ZTX757 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

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