ZTX792A - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX792A
Manufacturer

Diodes
ChipWorker Part#

CW61595153
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans GP BJT PNP 70V 2A 1000mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX792A Specifications

Attribute	Attribute Value

Part Number	ZTX792A
Manufacturer	Diodes
ChipWorker Part#	CW61595153
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	100 MHz
Voltage Rating (DC)	-70.0 V
Current Rating	-2.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	70 V
hFE Min	300 @10mA, 2V
Input Power (Max)	1 W
DC Current Gain (hFE)	300
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PNP ZTX792A general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.

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