ZTX851 ,BJT Transistor, BJT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

92 points

Part No

ZTX851
Manufacturer

Diodes
ChipWorker Part#

CW16213962
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans GP BJT NPN 60V 5A 1200mW Automotive 3Pin E-Line
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.79

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ZTX851 Specifications

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Attribute	Attribute Value

Part Number	ZTX851
Manufacturer	Diodes
ChipWorker Part#	CW16213962
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	130 MHz
Voltage Rating (DC)	60.0 V
Current Rating	5.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.2 W
Gain Bandwidth Product	130 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	5A
hFE Min	100 @2A, 1V
Input Power (Max)	1.2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1200 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

Compared to other transistors, the NPN ZTX851 general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.

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