ZTX853 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX853
Manufacturer

Diodes
ChipWorker Part#

CW10308040
Category

BJT Transistor, BJT
Package

E-Line-3
Description

Trans GP BJT NPN 100V 4A 1200mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX853 Specifications

Attribute	Attribute Value

Part Number	ZTX853
Manufacturer	Diodes
ChipWorker Part#	CW10308040
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	E-Line-3
Frequency	130 MHz
Voltage Rating (DC)	100 V
Current Rating	4.00 A
Power Rating	1.2 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.2 W
Gain Bandwidth Product	130 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	4A
hFE Min	100 @2A, 2V
Input Power (Max)	1.2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1200 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

If you require a general purpose BJT that can handle high voltages, then the NPN ZTX853 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

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