ZX5T953GTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZX5T953GTA
Manufacturer

Diodes
ChipWorker Part#

CW13538844
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans GP BJT PNP 100V 5A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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ZX5T953GTA Specifications

Attribute	Attribute Value

Part Number	ZX5T953GTA
Manufacturer	Diodes
ChipWorker Part#	CW13538844
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	125 MHz
Voltage Rating (DC)	-100 V
Current Rating	-5.00 A
Polarity	PNP
Power Dissipation	1.6 W
Gain Bandwidth Product	125 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	5A
hFE Min	100 @1A, 1V
Input Power (Max)	3 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3000 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Implement this PNP ZX5T953GTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

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