ZXMN10B08E6TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXMN10B08E6TA
Manufacturer

Diodes
ChipWorker Part#

CW19538397
Category

MOSFET, MOSFET Transistor
Package

SOT-23-6
Description

Trans MOSFET N-CH 100V 1.9A Automotive 6Pin SOT-23 T/R
Documentation

Datasheet

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ZXMN10B08E6TA Specifications

Attribute	Attribute Value

Part Number	ZXMN10B08E6TA
Manufacturer	Diodes
ChipWorker Part#	CW19538397
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Voltage Rating (DC)	100 V
Current Rating	1.90 A
Drain to Source Resistance (on) (Rds)	230 mΩ
Polarity	N-Channel
Power Dissipation	1.7 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.90 A
Rise Time	2.1 ns
Input Capacitance (Ciss)	497pF @50V(Vds)
Input Power (Max)	1.1 W
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.1W (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

This ZXMN10B08E6TA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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