ZXMN6A08E6 - Vishay Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXMN6A08E6
Manufacturer

Vishay Semiconductor
ChipWorker Part#

CW195808257
Category

MOSFET, MOSFET Transistor
Package

SOT-23
Description

DIODES INC. ZXMN6A08E6 MOSFET Transistor, N Channel, 3A, 60V, 100mohm, 10V, 1V
Documentation

Datasheet

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ZXMN6A08E6 Specifications

Attribute	Attribute Value

Part Number	ZXMN6A08E6
Manufacturer	Vishay Semiconductor
ChipWorker Part#	CW195808257
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-Channel
Power Dissipation	1.7 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	3.00 A
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17

Product Description

The ZXMN6A08E6 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low ON-resistance
Fast switching speed
Low threshold
Low gate drive
Green device
Qualified to AEC-Q101 standards for high reliability
Moisture sensitivity level 1 as per J-STD-020
UL94V-0 Flammability rating

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