ZXMN7A11GTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXMN7A11GTA
Manufacturer

Diodes
ChipWorker Part#

CW13347260
Category

MOSFET, MOSFET Transistor
Package

SOT-223-3
Description

Trans MOSFET N-CH 70V 3.8A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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ZXMN7A11GTA Specifications

Attribute	Attribute Value

Part Number	ZXMN7A11GTA
Manufacturer	Diodes
ChipWorker Part#	CW13347260
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223-3
Voltage Rating (DC)	70.0 V
Current Rating	3.80 A
Polarity	N-CH
Power Dissipation	3.9 W
Input Capacitance	298 pF
Gate Charge	4.35 nC
Drain to Source Voltage (Vds)	70 V
Continuous Drain Current (Ids)	3.80 A
Rise Time	2 ns
Input Capacitance (Ciss)	298pF @40V(Vds)
Input Power (Max)	2 W
Fall Time	5.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3900 mW
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

This ZXMN7A11GTA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3900 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode.

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