ZXTN25040DFHTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTN25040DFHTA
Manufacturer

Diodes
ChipWorker Part#

CW3628800
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 40V 4A 3Pin SOT23
Documentation

Datasheet

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ZXTN25040DFHTA Specifications

Attribute	Attribute Value

Part Number	ZXTN25040DFHTA
Manufacturer	Diodes
ChipWorker Part#	CW3628800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	190 MHz
Voltage Rating (DC)	40.0 V
Current Rating	4.00 A
Polarity	NPN
Power Dissipation	1.81 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	4A
hFE Min	300 @10mA, 2V
hFE Max	300 @10mA, 2V
Input Power (Max)	1.25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1810 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Implement this versatile NPN ZXTN25040DFHTA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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