ZXTN4004KTC - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTN4004KTC
Manufacturer

Diodes
ChipWorker Part#

CW9938204
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 150V 1A 3800mW Automotive 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet

ZXTN4004KTC Global Supplier

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ZXTN4004KTC Specifications

Attribute	Attribute Value

Part Number	ZXTN4004KTC
Manufacturer	Diodes
ChipWorker Part#	CW9938204
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	3.8 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	3.8 W
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	1A
Input Power (Max)	3.8 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	3800 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Design various electronic circuits with this versatile NPN ZXTN4004KTC GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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