ZXTP2012GTA - Diodes
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoZXTP2012GTA
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ManufacturerDiodes
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ChipWorker Part#CW8891914
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CategoryBJT Transistor, BJT
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PackageTO-261-4
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DescriptionTrans GP BJT PNP 60V 5.5A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
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DocumentationDatasheet
Payment Methods and Delivery
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ZXTP2012GTA Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | ZXTP2012GTA |
| Manufacturer | Diodes |
| ChipWorker Part# | CW8891914 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Frequency | 120 MHz |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -5.50 A |
| Power Rating | 3 W |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 1.6 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 5.5A |
| hFE Min | 100 @2A, 1V |
| Input Power (Max) | 3 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| expand all | |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| Mil-Spec | Yes |
| REACH SVHC Compliance Edition | 2019/01/15 |
| ECCN Code | EAR99 |
Product Description
- Look no further than Diodes Zetex"s PNP ZXTP2012GTA general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Delivery
Chipworker Certification
Ordering Information
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