ZXTP25100CZTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTP25100CZTA
Manufacturer

Diodes
ChipWorker Part#

CW18533617
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT PNP 100V 1A 4460mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet

ZXTP25100CZTA Global Supplier

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ZXTP25100CZTA Specifications

Attribute	Attribute Value

Part Number	ZXTP25100CZTA
Manufacturer	Diodes
ChipWorker Part#	CW18533617
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Frequency	180 MHz
Polarity	PNP
Power Dissipation	4460 mW
Gain Bandwidth Product	180 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	1A
hFE Min	200 @10mA, 2V
Input Power (Max)	2.4 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	4460 mW
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Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

Implement this versatile PNP ZXTP25100CZTA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

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