2N2102 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N2102
Manufacturer

ST Microelectronics
ChipWorker Part#

CW61684023
Category

BJT Transistor, BJT
Package

TO-5-3
Description

Trans GP BJT NPN 65V 1A 3Pin TO-39 Bag
Documentation

Datasheet

2N2102 Global Supplier

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2N2102 Specifications

Attribute	Attribute Value

Part Number	2N2102
Manufacturer	ST Microelectronics
ChipWorker Part#	CW61684023
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-5-3
Voltage Rating (DC)	120 V
Current Rating	1.00 A
Polarity	NPN
Power Dissipation	1000 mW
Breakdown Voltage (Collector to Base)	120 V (min)
Breakdown Voltage (Collector to Emitter)	65 V
hFE Min	40 @150mA, 10V
Input Power (Max)	1 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	6.6 mm
Material	Silicon
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Bipolar (BJT) Transistor NPN 65 V 1 A - 1 W Through Hole TO-39

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