A2I25D025GNR1 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

A2I25D025GNR1
Manufacturer

NXP
ChipWorker Part#

CW68965476
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Amplifier,2100 to 2900MHz, 24W, Typ Gain in dB is 32.5 @ 2690MHz, 28V, LDMOS, SOT1730
Documentation

Datasheet

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A2I25D025GNR1 Specifications

Attribute	Attribute Value

Part Number	A2I25D025GNR1
Manufacturer	NXP
ChipWorker Part#	CW68965476
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	17 Pin
Case/Package	TO-270-17
Frequency	2.69 GHz
Output Power	3.2 W
Gain	31.9 dB
Test Current	59 mA
Operating Temperature (Max)	225 ℃
Operating Temperature (Min)	-40 ℃
Voltage Rating	65 V
	expand all
Weight	598.1 mg
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

Overview
The A2I25D025N wideband integrated circuit is designed with on-chip matching that makes it usable from 2100 to 2900 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
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## Features
* On-Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
## Features RF Performance Table
### 2300-2690 MHz
Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 56 mA, IDQ2(A+B) = 136 mA, Pout = 3.2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.*Frequency** | **Gps
(dB)* | **PAE
(%)* | **ACPR
(dBc)*
\---|---|---|---
2300 MHz| 32.0| 19.0| –46.7
2350 MHz| 31.8| 19.0| –47.1
2400 MHz| 31.7| 19.1| –47.5
2496 MHz| 31.7| 19.3| –47.3
2600 MHz| 32.0| 19.5| –47.1
2690 MHz| 32.5| 20.0| –46.8

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