ADUM4121 - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ADUM4121
Manufacturer

ADI
ChipWorker Part#

CW983392200
Description

High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2A Output with Thermal Shutdown
Documentation

Datasheet

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ADUM4121 Specifications

Attribute	Attribute Value

Part Number	ADUM4121
Manufacturer	ADI
ChipWorker Part#	CW983392200
Documentation	Datasheet
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Product Lifecycle Status	Recommended for New Designs

Product Description

Product Details
The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’s iCoupler® technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.
The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.
The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.
Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.
Applications
Switching power supplies
Isolated IGBT/MOSFET gate drives
Industrial inverters
Gallium nitride (GaN)/silicon carbide (SiC) power devices
### Features and Benefits
2 A peak output current (<2 Ω RDSON)
2.5 V to 6.5 V input
4.5 V to 35 V output
Undervoltage lockout (UVLO) at 2.5 V VDD1
Multiple UVLO options on VDD2
Grade A: 4.4 V (typical) UVLO on VDD2
Grade B: 7.3 V (typical) UVLO on VDD2
Grade C: 11.3 V (typical) UVLO on VDD2
Precise timing characteristics
53 ns maximum isolator and driver propagation delay
CMOS input logic levels
High common-mode transient immunity: >150 kV/µs
High junction temperature operation: 125°C
Default low output
Internal Miller clamp
Safety and regulatory approvals (pending)
UL recognition per UL 1577
5 kV rms for 1 minute SOIC long package
CSA Component Acceptance Notice 5A
VDE certificate of conformity (pending)
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
VIORM = 849 V peak
Wide body, 8-lead SOIC

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