AFM907NT1 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AFM907NT1
Manufacturer

NXP
ChipWorker Part#

CW43826518
Category

BJT Transistor, BJT
Package

DFN-16
Description

Trans RF MOSFET N-CH 30V 16Pin HVSON EP T/R
Documentation

Datasheet

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AFM907NT1 Specifications

Attribute	Attribute Value

Part Number	AFM907NT1
Manufacturer	NXP
ChipWorker Part#	CW43826518
Category	BJT Transistor, BJT
Documentation	Datasheet
Number of Pins	16 Pin
Case/Package	DFN-16
Frequency	136MHz ~ 941MHz
Number of Positions	16 Position
Power Dissipation	65.7 W
Output Power	8.4 W
Test Current	100 mA
Input Capacitance (Ciss)	95.7pF @7.5V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	6570 mW
Voltage Rating	30 V
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Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Overview
The AFM907N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
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## Features
* Characterized for operation from 136 to 941 MHz
* Unmatched input and output allowing wide frequency range utilization
* Integrated ESD protection
* Integrated stability enhancements
* Wideband — full power across the band
* Exceptional thermal performance
* Extreme ruggedness
* High linearity for: TETRA, SSB
* RoHS compliant
**Typical Applications**
* Output stage VHF band handheld radio
* Output stage UHF band handheld radio
* Output stage for 700-800 MHz handheld radio
## Features RF Performance Tables
### Wideband Performance
(In 350-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)*Frequency
(MHz)(1)* | **Pin
(W)* | **Gps
(dB)* | **ηD
(%)* | **Pout
(W)*
\---|---|---|---|---
350| 0.25| 15.2| 56.6| 8.4
435| 0.25| 15.5| 61.5| 8.9
520| 0.25| 15.0| 64.2| 7.9
### Narrowband Performance
(7.5 Vdc, TA = 25°C, CW)*Frequency
(MHz)* | **Gps
(dB)* | **ηD
(%)* | **Pout
(W)*
\---|---|---|---
520(2)| 20.7| 73.9| 8.4
### Load Mismatch/Ruggedness
**Frequency
(MHz)* | **Signal Type** | **VSWR** | **Pin
(dBm)* | **Test
Voltage* | **Result**
\---|---|---|---|---|---
520(2) | CW | > 65:1 at all Phase Angles | 21
(3 dB Overdrive) | 10.8 | No Device Degradation
1\\. Measured in 350-520 MHz UHF broadband reference circuit.
2\\. Measured in 520 MHz narrowband RF test fixture.

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