APT100GT60JRDQ4 ,IGBT Transistor, IGBT Module - Microsemi
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
67 points
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Part NoAPT100GT60JRDQ4
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ManufacturerMicrosemi
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ChipWorker Part#CW87123746
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CategoryIGBT Transistor, IGBT Module
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PackageSOT-227
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DescriptionTrans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 35.67
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APT100GT60JRDQ4 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | APT100GT60JRDQ4 | |
| Manufacturer | Microsemi | |
| ChipWorker Part# | CW87123746 | |
| Category | IGBT Transistor, IGBT Module | |
| Documentation | Datasheet | |
| Mounting Style | Chassis | |
| Number of Pins | 4 Pin | |
| Case/Package | SOT-227 | |
| Power Dissipation | 500000 mW | |
| Breakdown Voltage (Collector to Emitter) | 600 V | |
| Input Capacitance (Cies) | 5.15nF @25V | |
| Input Power (Max) | 500 W | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 500000 mW | |
| expand all | ||
| Operating Temperature | -55℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tube | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| ECCN Code | EAR99 |
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Product Description
- This APT100GT60JRDQ4 IGBT transistor from Microsemi will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
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