AUIRF2804 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRF2804
Manufacturer

Infineon
ChipWorker Part#

CW19297886
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 40V 270A
Documentation

Datasheet

AUIRF2804 Global Supplier

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AUIRF2804 Specifications

Attribute	Attribute Value

Part Number	AUIRF2804
Manufacturer	Infineon
ChipWorker Part#	CW19297886
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	300 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0018 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	270A
Rise Time	120 ns
Input Capacitance (Ciss)	6450pF @25V(Vds)
Fall Time	130 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRF2804 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Ultra-low ON-resistance
Repetitive avalanche allowed up to Tjmax

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