BLF645 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BLF645
Manufacturer

NXP
ChipWorker Part#

CW432389655
Category

Transistor
RoHS

Lead free / RoHS Compliant
Description

LDMOS, RF, 100W, HF-1300MHz, 65V; Transistor Type: RF MOSFET; Drain Source Voltage Vds: 65V; Continuous Drain Current...
Documentation

Datasheet

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BLF645 Specifications

Attribute	Attribute Value

Part Number	BLF645
Manufacturer	NXP
ChipWorker Part#	CW432389655
Category	Transistor
Documentation	Datasheet
Number of Pins	4 Pin
	expand all
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Features
■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
♦ Average output power = 100 W
♦ Power gain = 18 dB
♦ Drain efficiency = 56 %
■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
♦ Peak envelope load power = 100 W
♦ Power gain = 18 dB
♦ Drain efficiency = 45 %
♦ Intermodulation distortion = −32 dBc
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
Applications
■ Communication transmitter applications in the HF to 1400 MHz frequency range
■ Industrial applications in the HF to 1400 MHz frequency range

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