BU508AW ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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149 points

Part No

BU508AW
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1673809
Category

BJT Transistor, BJT
Package

TO-247-3
Description

Trans GP BJT NPN 700V 8A 125000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

638 pcs In Stock
Estimated Price

$ 0.96

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BU508AW Specifications

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Attribute	Attribute Value

Part Number	BU508AW
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1673809
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	125 W
Breakdown Voltage (Collector to Emitter)	700 V
hFE Min	10 @100mA, 5V
hFE Max	10
Input Power (Max)	125 W
DC Current Gain (hFE)	5
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
	expand all
Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
State-of-the-art technology - Diffused collector enhanced generation
Stable performances versus operating temperature variation
Low base-drive requirement
Tight hFE range at operating collector current
High ruggedness
Well-controlled hFE parameter for increased reliability

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