EMG9T2R ,BJT Transistor, BJT - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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91 points

Part No

EMG9T2R
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW45855040
Category

BJT Transistor, BJT
Package

SMD-6
Description

EMT NPN 50V 100mA
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.03

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EMG9T2R Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	EMG9T2R
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW45855040
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SMD-6
Voltage Rating (DC)	50.0 V
Current Rating	50.0 mA
Power Rating	0.15 W
Polarity	NPN
Power Dissipation	0.15 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	30 @5mA, 5V
Input Power (Max)	150 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	250 MHz
Power Dissipation (Max)	150 mW
	expand all
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Similar & Replacement Parts

Product Description

Features
1) Built-In Biasing Resistors, R1 = R2 = 10kW.
2) Two DTC114E chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
Application
Inverter circuit, Interface circuit, Driver circuit

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