FCD4N60TM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FCD4N60TM
Manufacturer

Fairchild
ChipWorker Part#

CW69359407
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

FAIRCHILD SEMICONDUCTOR FCD4N60TM Power MOSFET, N Channel, 3.9A, 600V, 1Ω, 10V, 5V
Documentation

Datasheet

FCD4N60TM Global Supplier

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FCD4N60TM Specifications

Attribute	Attribute Value

Part Number	FCD4N60TM
Manufacturer	Fairchild
ChipWorker Part#	CW69359407
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	3.90 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	50 W
Threshold Voltage	5 V
Input Capacitance	540 pF
Gate Charge	16.6 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	3.90 A
Rise Time	45 ns
Input Capacitance (Ciss)	540pF @25V(Vds)
Input Power (Max)	50 W
Fall Time	30 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	50W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Ultra low gate charge (Qg = 12.8nC)
Low effective output capacitance (Coss.eff = 32pF)
100% avalanche tested

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