FDD6030L - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDD6030L
Manufacturer

Fairchild
ChipWorker Part#

CW79925177
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 30V 50A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

FDD6030L Global Supplier

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FDD6030L Specifications

Attribute	Attribute Value

Part Number	FDD6030L
Manufacturer	Fairchild
ChipWorker Part#	CW79925177
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	14.5 mΩ
Polarity	N-Channel
Power Dissipation	3.2 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	50.0 A
Rise Time	7 ns
Input Capacitance (Ciss)	1230pF @15V(Vds)
Input Power (Max)	1.5 W
Fall Time	12 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.2W (Ta), 56W (Tc)
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Size-Width	6.22 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Features
· 12 A, 30 V RDS(ON)= 14.5 mW@ VGS= 10 V
RDS(ON)= 21 mW@ VGS= 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)

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