FDG6318P ,MOSFET, MOSFET Transistor - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
85 points
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Part NoFDG6318P
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ManufacturerFairchild
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ChipWorker Part#CW70910457
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CategoryMOSFET, MOSFET Transistor
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PackageSC-70-6
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DescriptionTrans MOSFET P-CH 20V 0.5A 6Pin SC-70 T/R
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DocumentationDatasheet
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Ships fromMoscow
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Наличие4300 pcs In Stock
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Estimated Price$ 0.12
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FDG6318P Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | FDG6318P | |
| Manufacturer | Fairchild | |
| ChipWorker Part# | CW70910457 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 6 Pin | |
| Case/Package | SC-70-6 | |
| Voltage Rating (DC) | -20.0 V | |
| Current Rating | -500 mA | |
| Number of Channels | 2 Channel | |
| Drain to Source Resistance (on) (Rds) | 780 mΩ | |
| Polarity | P-Channel | |
| Power Dissipation | 0.3 W | |
| Input Capacitance | 83.0 pF | |
| Gate Charge | 860 pC | |
| Drain to Source Voltage (Vds) | 20 V | |
| Breakdown Voltage (Drain to Source) | 20 V | |
| Breakdown Voltage (Gate to Source) | ±12.0 V | |
| Continuous Drain Current (Ids) | 500 mA | |
| Rise Time | 12 ns | |
| Input Capacitance (Ciss) | 83pF @10V(Vds) | |
| Input Power (Max) | 300 mW | |
| Fall Time | 1 ns | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 0.3 W | |
| expand all | ||
| Size-Length | 2 mm | |
| Size-Width | 1.25 mm | |
| Size-Height | 1 mm | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| ECCN Code | EAR99 |
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Product Description
- Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS Applications • Battery management Features • Very low level gate drive requirements allowing direct operation in 3V circuits • Compact industry standard SC70-6 surface mount package
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