FDG6332C ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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111 points

Part No

FDG6332C
Manufacturer

Fairchild
ChipWorker Part#

CW32525063
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

Trans MOSFET N/P-CH 20V 0.7A/0.6A 6Pin SC-70 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.15

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FDG6332C Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FDG6332C
Manufacturer	Fairchild
ChipWorker Part#	CW32525063
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Current Rating	700 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	300 mW
Threshold Voltage	1.1 V
Input Capacitance	114 pF
Gate Charge	1.40 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	±20.0 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	700 mA
Rise Time	14.0 ns
Input Capacitance (Ciss)	113pF @10V(Vds)
Input Power (Max)	300 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.3 W
	expand all
Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
Low gate charge
High performance Trench technology for extremely low RDS (ON)
Small footprint
Low profile

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