FDP20N50F - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDP20N50F
Manufacturer

ON Semiconductor
ChipWorker Part#

CW53683025
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

MOSFET N-CH 500V 20A TO-220
Documentation

Datasheet

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FDP20N50F Specifications

Attribute	Attribute Value

Part Number	FDP20N50F
Manufacturer	ON Semiconductor
ChipWorker Part#	CW53683025
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.22 Ω
Power Dissipation	250 W
Threshold Voltage	3 V
Input Capacitance	2550 pF
Drain to Source Voltage (Vds)	500 V
Rise Time	120 ns
Input Capacitance (Ciss)	3390pF @25V(Vds)
Input Power (Max)	250 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Size-Length	10.67 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FDP20N50F is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dV/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Improve dV/dt capability
100% Avalanche tested
50nC Typical low gate charge
27pF Typical low Crss

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