FJV1845FMTF - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FJV1845FMTF
Manufacturer

ON Semiconductor
ChipWorker Part#

CW57663667
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

NPN Epitaxial Silicon Transistor
Documentation

Datasheet

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FJV1845FMTF Specifications

Attribute	Attribute Value

Part Number	FJV1845FMTF
Manufacturer	ON Semiconductor
ChipWorker Part#	CW57663667
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	120 V
hFE Min	150
Input Power (Max)	300 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1.04 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The FJV1845FMTF is a NPN silicon epitaxial Bipolar Transistor suitable for amplifier applications. It offers 50mA collector current and 300mW collector dissipation.
Complement to FJV992

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