FQP8N60C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP8N60C
Manufacturer

Fairchild
ChipWorker Part#

CW40124536
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

FAIRCHILD SEMICONDUCTOR FQP8N60C Power MOSFET, N Channel, 7.5A, 600V, 1Ω, 10V, 4V
Documentation

Datasheet

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FQP8N60C Specifications

Attribute	Attribute Value

Part Number	FQP8N60C
Manufacturer	Fairchild
ChipWorker Part#	CW40124536
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	7.50 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	147 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	7.50 A
Rise Time	60.5 ns
Input Capacitance (Ciss)	1255pF @25V(Vds)
Input Power (Max)	147 W
Fall Time	64.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	147W (Tc)
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Size-Length	10.67 mm
Size-Width	4.7 mm
Size-Height	16.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQP8N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested
Improved system reliability in PFC and soft switching topologies
Switching loss improvements
Lower conduction loss

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