FQT13N06LTF - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQT13N06LTF
Manufacturer

Fairchild
ChipWorker Part#

CW76076931
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET N-CH 60V 2.8A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FQT13N06LTF Specifications

Attribute	Attribute Value

Part Number	FQT13N06LTF
Manufacturer	Fairchild
ChipWorker Part#	CW76076931
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	60.0 V
Current Rating	2.80 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.088 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.80 A
Rise Time	90 ns
Input Capacitance (Ciss)	350pF @25V(Vds)
Input Power (Max)	2.1 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1W (Tc)
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQT13N06LTF is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
4.8nC Typical low gate charge
17pF Typical low Crss

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