IPW65R080CFDA - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPW65R080CFDA
Manufacturer

Infineon
ChipWorker Part#

CW19368300
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 650V 43.3A
Documentation

Datasheet

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IPW65R080CFDA Specifications

Attribute	Attribute Value

Part Number	IPW65R080CFDA
Manufacturer	Infineon
ChipWorker Part#	CW19368300
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Polarity	N-CH
Power Dissipation	391 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	43.3A
Rise Time	18 ns
Input Capacitance (Ciss)	4440pF @100V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	391000 mW
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & lowQ oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
Benefits:
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability

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