IR2113PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2113PBF
Manufacturer

Infineon
ChipWorker Part#

CW2917836
Category

FET Driver
Package

DIP-14
Description

MOSFET DRVR 600V 2.5A 2Out Hi/Lo Side Non-Inv 14Pin PDIP
Documentation

Datasheet

IR2113PBF Global Supplier

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IR2113PBF Specifications

Attribute	Attribute Value

Part Number	IR2113PBF
Manufacturer	Infineon
ChipWorker Part#	CW2917836
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	14 Pin
Case/Package	DIP-14
Supply Voltage (DC)	10.0V (min)
Operating Voltage	10V ~ 20V
Power Rating	1.6 W
Rise/Fall Time	25ns, 17ns
Number of Outputs	2 Output
Output Voltage	620 V
Output Current	2.5 A
Number of Channels	2 Channel
Number of Positions	14 Position
Power Dissipation	1600 mW
Quiescent Current	340 µA
Rise Time	35 ns
Fall Time	25 ns
Fall Time (Max)	25 ns
Fall Time (Max)	35 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	3.3V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	20.19 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2113PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Cycle-by-cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs

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