IRF6201PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF6201PBF
Manufacturer

Infineon
ChipWorker Part#

CW34523193
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 20V 27A
Documentation

Datasheet

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IRF6201PBF Specifications

Attribute	Attribute Value

Part Number	IRF6201PBF
Manufacturer	Infineon
ChipWorker Part#	CW34523193
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0019 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.1 V
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20 V
Continuous Drain Current (Ids)	27A
Rise Time	100 ns
Input Capacitance (Ciss)	8555pF @16V(Vds)
Fall Time	265 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF6201PBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, high side and low side switch.
Low RDS (ON) (
Industry standard package for multi-vendor compatibility
Halogen-free

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