IRF7410TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7410TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW242425
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 20V 16A
Documentation

Datasheet

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IRF7410TRPBF Specifications

Attribute	Attribute Value

Part Number	IRF7410TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW242425
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.007 Ω
Polarity	P-CH
Power Dissipation	2.5 W
Threshold Voltage	900 mV
Input Capacitance	8676 pF
Drain to Source Voltage (Vds)	12 V
Continuous Drain Current (Ids)	16A
Rise Time	12 ns
Input Capacitance (Ciss)	8676pF @10V(Vds)
Input Power (Max)	2.5 W
Fall Time	200 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7410TRPBF is a -12V single P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
Ultra low on-resistance
Surface mount

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