IRFR1205PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR1205PBF
Manufacturer

Infineon
ChipWorker Part#

CW10249900
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 44A
Documentation

Datasheet

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IRFR1205PBF Specifications

Attribute	Attribute Value

Part Number	IRFR1205PBF
Manufacturer	Infineon
ChipWorker Part#	CW10249900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	69 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.027 Ω
Polarity	N-Channel
Power Dissipation	69 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	44A
Rise Time	69 ns
Input Capacitance (Ciss)	1300pF @25V(Vds)
Input Power (Max)	107 W
Fall Time	60 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	107W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR1205PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating

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